issue 2 - august 2006 1 www.zetex.com ? zetex semiconductors plc 2006 ZXMN7A11K 70v n-channel enhancement mode mosfet summary v (br)dss =70v : r ds(on) =0.13 i d =6.1a description this new generation of trench mo sfets from zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. this makes them ideal for high efficiency, low voltage power management applications. features ? low on-resistance ? fast switching speed ? low threshold ? low gate drive ? dpak package applications ? dc-dc converters ? power management functions ? disconnect switches ? motor control ? class d audio output stages ordering information device marking zxmn 7a11 device reel size (inches) tape width (mm) quantity per reel ZXMN7A11Ktc 13 16 2,500 d s g gs d d pinout - top view
ZXMN7A11K issue 2 - august 2006 2 www.zetex.com ? zetex semiconductors plc 2006 absolute maximum ratings notes: (a) for a device surface mounted on 50mm x 50mm x 1.6mm fr 4 pcb with high coverage of single sided 2oz copper, in still air conditions. (b) for a device surface mounted on fr4 pcb measured at t 10 sec. (c) repetitive rating 50mm x 50mm x 1.6mm fr4 pcb, d=0.02 pulse width=300 s - pulse width limited by maximum junction temperature. (d) for a device surface mounted on 25mm x 25mm x 1.6mm fr 4 pcb with high coverage of single sided 1oz copper, in still air conditions. parameter symbol limit unit drain-source voltage v dss 70 v gate-source voltage v gs 20 v continuous drain current @ v gs =10v; t a =25c (b) @ v gs =10v; t a =70c (b) @ v gs =10v; t a =25c (a) i d 6.1 4.9 4.2 a pulsed drain current (c) i dm 17 a continuous source current (body diode) (b) i s 8.7 a pulsed source current (body diode) (c) i sm 17 a power dissipation at t a =25c (a) linear derating factor p d 4.06 32.4 w mw/c power dissipation at t a =25c (b) linear derating factor p d 8.5 68 w mw/c power dissipation at t a =25c (d) linear derating factor p d 2.11 16.8 w mw/c operating and storage temperature range t j , t stg -55 to +150 c thermal resistance parameter symbol limit unit junction to ambient r ja 30.8 c/w junction to ambient r ja 14.7 c/w junction to ambient r ja 59.1 c/w
ZXMN7A11K issue 2 - august 2006 3 www.zetex.com ? zetex semiconductors plc 2006 characteristics
ZXMN7A11K issue 2 - august 2006 4 www.zetex.com ? zetex semiconductors plc 2006 electrical characteristics (at ta mb = 25c unless otherwise stated) parameter symbol min. typ. max. unit conditions static drain-source breakdown voltage v (br)dss 70 v i d = 250 a, v gs =0v zero gate voltage drain current i dss 1 av ds = 70v, v gs =0v gate-body leakage i gss 100 na v gs =20v, v ds =0v gate-source threshold voltage v gs(th) 1.0 v i d = 250 a, v ds =v gs static drain-source on-state resistance (*) notes: (*) measured under pulsed conditions. pulse width 300 s; duty cycle 2%. r ds(on) 0.13 v gs = 10v, i d = 4.4a 0.19 v gs = 4.5v, i d = 3.8a forward transconductance (*)(?) g fs 4.66 s v ds = 15v, i d = 4.4a dynamic (?) input capacitance c iss 298 pf v ds = 40v, v gs =0v f=1mhz output capacitance c oss 35 pf reverse transfer capacitance c rss 21 pf switching (?) (?) (?) switching characteristics are independ ent of operating junction temperature. turn-on-delay time t d(on) 1.9 ns v dd = 35v, i d = 1a r g ? 6.0 , v gs = 10v rise time t r 2ns turn-off delay time t d(off) 11.5 ns fall time t f 5.8 ns total gate charge q g 4.35 nc v ds = 35v, v gs = 5v i d = 4.4a total gate charge q g 7.4 nc v ds =35v, v gs = 10v i d = 4.4a gate-source charge q gs 1.06 nc gate drain charge q gd 1.8 nc source-drain diode diode forward voltage (*) v sd 0.85 0.95 v t j =25c, i s = 2.5a, v gs =0v reverse recovery time (?) (?) for design aid only, not subject to production testing. t rr 19.8 ns t j =25c, i s = 2.5a, di/dt=100a/ s reverse recovery charge (?) q rr 14 nc
ZXMN7A11K issue 2 - august 2006 5 www.zetex.com ? zetex semiconductors plc 2006 typical characteristics
ZXMN7A11K issue 2 - august 2006 6 www.zetex.com ? zetex semiconductors plc 2006 typical characteristics
ZXMN7A11K issue 2 - august 2006 7 www.zetex.com ? zetex semiconductors plc 2006 intentionally left blank
ZXMN7A11K issue 2 - august 2006 8 www.zetex.com ? zetex semiconductors plc 2006 for international sales offices visit www.zetex.com/offices zetex products are distributed worldwide. for details, see www.zetex.com/salesnetwork this publication is issued to provide outline information only whic h (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. the company reserves the right to alter without notice the specif ication, design, price or conditions of supply of any product or service. europe zetex gmbh kustermann-park balanstra?e 59 d-81541 mnchen germany telefon: (49) 89 45 49 49 0 fax: (49) 89 45 49 49 49 europe.sales@zetex.com americas zetex inc 700 veterans memorial highway hauppauge, ny 11788 usa telephone: (1) 631 360 2222 fax: (1) 631 360 8222 usa.sales@zetex.com asia pacific zetex (asia ltd) 3701-04 metroplaza tower 1 hing fong road, kwai fong hong kong telephone: (852) 26100 611 fax: (852) 24250 494 asia.sales@zetex.com corporate headquarters zetex semiconductors plc zetex technology park, chadderton oldham, ol9 9ll united kingdom telephone: (44) 161 622 4444 fax: (44) 161 622 4446 hq@zetex.com package outline - dpak note: controlling dimensions are in inches. approx imate dimensions are provided in millimeters dim inches millimeters dim inches millimeters min max min max min max min max a 0.086 0.094 2.18 2.39 e 0.090 bsc 2.29 bsc a1 - 0.005 - 0.127 h 0.370 0.410 9.40 10.41 b 0.020 0.035 0.508 0.89 l 0.055 0.070 1.40 1.78 b2 0.030 0.045 0.762 1.14 l1 0.108 ref 2.74 ref b3 0.205 0.215 5.21 5.46 l2 0.020 bsc 0.508 bsc c 0.018 0.024 0.457 0.61 l3 0.035 0.065 0.89 1.65 c2 0.018 0.023 0.457 0.584 l4 0.025 0.040 0.635 1.016 d 0.213 0.245 5.41 6.22 l5 0.045 0.060 1.14 1.52 d1 0.205 - 5.21 - 1 0 10 0 10 e 0.250 0.265 6.35 6.73 0 15 0 15 e10.170-4.32------
|
